1997 May 22

3

Philips Semiconductors

Product specification

PNP general purpose transistors

BCF29; BCF30

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−−32

V

collector-emitter voltage

open base

−−32

V

emitter-base voltage

open collector

−−5V

collector current (DC)

−−100

mA

peak collector current

−−200

mA

peak base current

−−100

mA

total power dissipation

−

250

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to ambient note 1

500

K/W