Nexperia

BAS70

General-purpose Schottky diode

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

IF = 1 mA; tp ≤ 300 µs; δ ≤ 0.02;

pulsed; Tamb = 25 °C

-

-

410

mV

IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02;

pulsed; Tamb = 25 °C

-

-

750

mV

VF

forward voltage

IF = 15 mA; tp ≤ 300 µs; δ ≤ 0.02;

pulsed; Tamb = 25 °C

-

-

1

V

VR = 50 V; Tamb = 25 °C

-

-

100

nA

IR

reverse current

VR = 70 V; Tamb = 25 °C

-

-

10

µA

Cd

diode capacitance

VR = 0 V; f = 1 MHz; Tamb = 25 °C

-

-

2

pF

10

0

0.2

0.4

0.6

0.8

1

1

IF

(mA)

VF (V)

mra803

(1)

(4)

(2) (3)

102

10- 1

10- 2

(1) Tamb = 125 °C

(2) Tamb = 85 °C

(3) Tamb = 25 °C

(4) Tamb = −40 °C

Fig. 1. Forward current as a function of forward

voltage; typical values

mra805

1

10

102

0

20

40

60

80

VR (V)

IR

(µA)

(1)

(3)

(2)

10- 1

10- 2

10- 3

(1) Tamb = 125 °C

(2) Tamb = 85 °C

(3) Tamb = 25 °C

Fig. 2. Reverse current as a function of reverse

voltage; typical values

BAS70

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Product data sheet

1 October 2022

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