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BC847F Datasheet(PDF) 3 Page - NXP Semiconductors

No. de pieza BC847F
Descripción Electrónicos  NPN general purpose transistors
PDF  8 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BC847F Datasheet(HTML) 3 Page - NXP Semiconductors

  BC847F Datasheet HTML 1Page - NXP Semiconductors BC847F Datasheet HTML 2Page - NXP Semiconductors BC847F Datasheet HTML 3Page - NXP Semiconductors BC847F Datasheet HTML 4Page - NXP Semiconductors BC847F Datasheet HTML 5Page - NXP Semiconductors BC847F Datasheet HTML 6Page - NXP Semiconductors BC847F Datasheet HTML 7Page - NXP Semiconductors BC847F Datasheet HTML 8Page - NXP Semiconductors  
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1999 May 18
3
Philips Semiconductors
Preliminary specification
NPN general purpose transistors
BC846F; BC847F; BC848F series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
BC846AF; BC846BF
−
80
V
BC847AF; BC847BF; BC847CF
−
50
V
BC848AF; BC848BF; BC848CF
−
30
V
VCEO
collector-emitter voltage
open base
BC846AF; BC846BF
−
65
V
BC847AF; BC847BF; BC847CF
−
45
V
BC848AF; BC848BF; BC848CF
−
30
V
VEBO
emitter-base voltage
open collector
−
5V
IC
collector current (DC)
−
100
mA
ICM
peak collector current
−
200
mA
IBM
peak base current
−
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
−
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C



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