PDTC143TS datasheet(5/15 Pages) NEXPERIA

5 / 15 page

2004 Aug 04

NXP Semiconductors

Product data sheet

PNP resistor-equipped transistors;

R1 = 4.7 k

Ω, R2 = open

PDTA143T series

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Notes

Refer to standard mounting conditions.

Reflow soldering is the only recommended soldering method.

Refer to SOT883 standard mounting conditions; FR4 with 60

μm copper strip line.

THERMAL CHARACTERISTICS

Notes

Refer to standard mounting conditions.

Reflow soldering is the only recommended soldering method.

Refer to SOT883 standard mounting conditions; FR4 with 60

μm copper strip line.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

−50

VCEO

collector-emitter voltage

open base

−

−50

VEBO

emitter-base voltage

open collector

−

−5

output current (DC)

−

−100

ICM

peak collector current

−

−100

Ptot

total power dissipation

Tamb ≤ 25 °C

SOT23

note 1

−

250

SOT54

note 1

−

500

SOT323

note 1

−

200

SOT346

note 1

−

250

SOT416

note 1

−

150

SOT490

notes 1 and 2

−

250

SOT883

notes 2 and 3

−

250

Tstg

storage temperature

−65

+150

°C

junction temperature

−

150

°C

Tamb

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

in free air

SOT23

note 1

500

K/W

SOT54

note 1

250

K/W

SOT323

note 1

625

K/W

SOT346

note 1

500

K/W

SOT416

note 1

833

K/W

SOT490

note 1

500

K/W

SOT883

notes 2 and 3

500

K/W

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