Nexperia

PHPT610030NK

NPN/NPN high power double bipolar transistor

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per transistor

VCBO

collector-base voltage

open emitter

-

100

V

VCEO

collector-emitter voltage open base

-

100

V

VEBO

emitter-base voltage

open collector

-

7

V

IC

collector current

-

3

A

ICM

peak collector current

single pulse; tp ≤ 1 ms

-

8

A

IB

base current

-

0.5

A

[1]

-

1

W

[2]

-

2.4

W

Ptot

total power dissipation

Tamb ≤ 25 °C

[3]

-

25

W

Per device

[1]

-

1.25

W

[4]

-

5

W

Ptot

total power dissipation

Tamb ≤ 25 °C

[2]

-

3

W

Tj

junction temperature

-

175

°C

Tamb

ambient temperature

-55

175

°C

Tstg

storage temperature

-65

175

°C

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.

[3] Power dissipation from junction to mounting base.

[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.

Tamb (°C)

-75

225

150

0

75

aaa-014341

2

1

3

4

Ptot

(W)

0

(1)

(2)

(1) FR4 PCB, mounting pad for collector 6 cm2

(2) FR4 PCB, standard footprint

Fig. 1. Per transistor: power derating curves

PHPT610030NK

All information provided in this document is subject to legal disclaimers.

© Nexperia B.V. 2020. All rights reserved

Product data sheet

10 September 2020

3 / 14