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F0118G Datasheet(PDF) 3 Page - OSRAM GmbH

No. de pieza F0118G
Descripción Electrónicos  GaAs-Infrarot-Lumineszenzdiode (950 nm, Enhanced Power) GaAs Infrared Emitting Diode (950 nm, Enhanced Power)
PDF  6 Pages
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Fabricante Electrónico  OSRAM [OSRAM GmbH]
Página de inicio  http://www.osram.com
Logo OSRAM - OSRAM GmbH

F0118G Datasheet(HTML) 3 Page - OSRAM GmbH

  F0118G Datasheet HTML 1Page - OSRAM GmbH F0118G Datasheet HTML 2Page - OSRAM GmbH F0118G Datasheet HTML 3Page - OSRAM GmbH F0118G Datasheet HTML 4Page - OSRAM GmbH F0118G Datasheet HTML 5Page - OSRAM GmbH F0118G Datasheet HTML 6Page - OSRAM GmbH  
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F 0118G
2003-04-10
3
Mechanische Werte
Mechanical values
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
1)
Einheit
Unit
min.
typ.
max.
Chipkantenlänge (x-Richtung)
Length of chip edge (x-direction)
L
x
0.28
0.30
0.32
mm
Chipkantenlänge (y-Richtung)
Length of chip edge (y-direction)
L
y
0.28
0.30
0.32
mm
Durchmesser des Wafers
Diameter of the wafer
D
76.2
mm
Chiphöhe
Die height
H
165
185
205
µm
Bondpaddurchmesser
Diameter of bondpad
d
135
µm
Weitere Informationen
Additional information
2)
Vorderseitenmetallisierung
Metallization frontside
Aluminium
Aluminum
Rückseitenmetallisierung
Metallization backside
Goldlegierung
Gold alloy
Trennverfahren
Dicing
Sägen
Sawing
Verbindung Chip - Träger
Die bonding
Kleben
Epoxy bonding
1)
Typical (refered to as typ.) data are defined as long-term production mean values and are only given for information.
This is not a specified value
2)
All chips are checked according to the following procedure and the OSRAM OS specification of the visual inspection
A63501-Q0013-N001-*-76G3:
The visual inspection shall be made in accordance to the "specification of the visual inspection" as referenced.The
visual inspection of chip backside is performed by eye for 100% of the area of each wafer. If decisions (good/bad) are
not possible additional a stereo microscope with incident light with 40x-80x magnification is used. Areas greater than
¼ cm² which have an amount of more than 3% failed dies will be marked manually with pen. The marked area from
backside will be transfered to frontside and will be also marked manually with pen. The visual inspection of chip
frontside is performed by a stereo microscope with incident light with 40x-80x magnification for 100% of the area of
each wafer. Areas greater than 1 cm² which have an amount of more than 50% failed dies and areas greater than 2
cm² which have an amount of more than 25% failed dies will be marked. The quality inspection (final visual inspection)
is performed by production. An additional visual inspection step as special release procedure by QM after the final
visual inspection is not installed.



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