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BAY80 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BAY80 Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 6 page ![]() 1996 Sep 18 2 Philips Semiconductors Product specification General purpose diode BAY80 FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 120 V • Repetitive peak reverse voltage: max. 150 V • Repetitive peak forward current: max. 625 mA. APPLICATIONS • Switching and general purposes in industrial equipment e.g. oscilloscopes, digital voltmeters and video output stages in colour television. DESCRIPTION The BAY80 is a switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35) package. Fig.1 Simplified outline (SOD27; DO-35) and symbol. The diode is type branded. handbook, halfpage MAM246 k a LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Device mounted on an FR4 printed circuit-board; lead length 10 mm. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 150 V VR continuous reverse voltage − 120 V IF continuous forward current see Fig.2; note 1 − 250 mA IFRM repetitive peak forward current − 625 mA IFSM non-repetitive peak forward current square wave; Tj =25 °C prior to surge; see Fig.4 t=1 µs − 9A t = 100 µs − 3A t=1s − 1A Ptot total power dissipation Tamb =25 °C; note 1 − 400 mW Tstg storage temperature −65 +175 °C Tj junction temperature − 175 °C |
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