Nexperia

BAS321-Q

General purpose diode

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

IF = 100 mA; Tj = 25 °C

-

-

1

V

VF

forward voltage

IF = 200 mA; Tj = 25 °C

-

-

1.25

V

VR = 200 V; Tj = 25 °C

-

-

100

nA

IR

reverse current

VR = 200 V; Tj = 150 °C

-

-

100

µA

Cd

diode capacitance

VR = 0 V; f = 1 MHz; Tj = 25 °C

-

-

2

pF

trr

reverse recovery time

IF = 30 mA; IR = 30 mA; RL = 100 Ω;

IR(meas) = 3 mA; Tj = 25 °C

-

-

50

ns

mbk927

0

50

100

200

Tamb (°C)

IF

(mA)

300

0

100

200

150

Device mounted on an FR4 PCB

Fig. 1. Maximum permissible continuous forward

current as a function of ambient temperature

600

IF

(mA)

0

200

400

mbg384

0

2

1

VF (V)

(1)

(3)

(2)

(1) Tj = 150 °C; typical values

(2) Tj = 25 °C; typical values

(3) Tj = 25 °C; maximum values

Fig. 2. Forward current as a function of forward

voltage

mbg703

10

1

102

IFSM

(A)

10- 1

tp (µs)

1

104

103

10

102

Based on square wave currents

Tj = 25 °C prior to surge

Fig. 3. Maximum permissible non-repetitive peak

forward current as a function of pulse duration

mbg381

200

0

100

Tj (°C)

10

IR

(µA)

1

10- 2

102

10- 1

(1)

(2)

(1) VR = VRmax; maximum values

(2) VR = VRmax; typical values

Fig. 4. Reverse current as a function of junction

temperature

BAS321-Q

All information provided in this document is subject to legal disclaimers.

© Nexperia B.V. 2021. All rights reserved

Product data sheet

2 June 2021

4 / 10