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BAT74 Datasheet(PDF) 3 Page - NXP Semiconductors

No. de pieza BAT74
Descripción Electrónicos  Schottky barrier double diode
PDF  7 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BAT74 Datasheet(HTML) 3 Page - NXP Semiconductors

  BAT74 Datasheet HTML 1Page - NXP Semiconductors BAT74 Datasheet HTML 2Page - NXP Semiconductors BAT74 Datasheet HTML 3Page - NXP Semiconductors BAT74 Datasheet HTML 4Page - NXP Semiconductors BAT74 Datasheet HTML 5Page - NXP Semiconductors BAT74 Datasheet HTML 6Page - NXP Semiconductors BAT74 Datasheet HTML 7Page - NXP Semiconductors  
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1996 Mar 19
3
Philips Semiconductors
Product specification
Schottky barrier double diode
BAT74
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. If both diodes are in forward operation at the same moment, total device current is max. 110 mA. If one diode is in
reverse and the other in forward operation at the same moment, total device current is max. 200 mA.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VR
continuous reverse voltage
−
30
V
IF
continuous forward current
−
200
mA
IFRM
repetitive peak forward current
tp ≤ 1s; δ≤ 0.5
−
300
mA
IFSM
non-repetitive peak forward current
tp < 10 ms
600
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; see Fig.2
−
230
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
125
°C
Tamb
operating ambient temperature
−65
+125
°C
Double diode operation
VR
continuous reverse voltage
−
30
V
series connection
−
60
V
IF
continuous forward current
−
110(1)
mA
IFRM
repetitive peak forward current
tp ≤ 1s; δ≤ 0.5
−
200
mA



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