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BAS221 Datasheet(PDF) 2 Page - NXP Semiconductors

No. de pieza BAS221
Descripción Electrónicos  General purpose diode
PDF  8 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BAS221 Datasheet(HTML) 2 Page - NXP Semiconductors

  BAS221 Datasheet HTML 1Page - NXP Semiconductors BAS221 Datasheet HTML 2Page - NXP Semiconductors BAS221 Datasheet HTML 3Page - NXP Semiconductors BAS221 Datasheet HTML 4Page - NXP Semiconductors BAS221 Datasheet HTML 5Page - NXP Semiconductors BAS221 Datasheet HTML 6Page - NXP Semiconductors BAS221 Datasheet HTML 7Page - NXP Semiconductors BAS221 Datasheet HTML 8Page - NXP Semiconductors  
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1999 May 07
2
Philips Semiconductors
Product specification
General purpose diode
BAS221
FEATURES
• Small ceramic SMD package
• Switching speed: max. 50 ns
• General application
• Continuous reverse voltage:
max. 200 V
• Repetitive peak reverse voltage:
max. 250 V
• Repetitive peak forward current:
max. 1 A.
APPLICATIONS
• General purpose switching in e.g.
surface mounted circuits.
DESCRIPTION
The BAS221 is a general purpose diode fabricated in planar technology, and
encapsulated in the ceramic SOD110 package.
Fig.1 Simplified outline (SOD110) and symbol.
handbook, 4 columns
MAM139
ka
cathode mark
top view
side view
bottom view
ak
Marking code: JS.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
250
V
VR
continuous reverse voltage
200
V
IF
continuous forward current
note 1; see Fig.2
300
mA
IFRM
repetitive peak forward current
tp < 0.5 ms; δ≤ 0.25
1A
IFSM
non-repetitive peak forward current
square wave; Tj =25 °C prior to
surge; see Fig.4
t=1
µs
20
A
t = 100
µs
7A
t = 10 ms
2A
Ptot
total power dissipation
Tamb =25 °C; note 1
400
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C



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