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HCS245MS Datasheet(PDF) 3 Page - Renesas Technology Corp

No. de pieza HCS245MS
Descripción Electrónicos  Radiation Hardened Octal Bus Transceiver, Three-State, Non-Inverting
PDF  8 Pages
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Fabricante Electrónico  RENESAS [Renesas Technology Corp]
Página de inicio  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HCS245MS Datasheet(HTML) 3 Page - Renesas Technology Corp

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HCS245MS
FN2468 Rev 1.00
Page 3 of 8
December 1992
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
(NOTES 1, 2)
CONDITIONS
GROUP
A SUB-
GROUPS
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Propagation Delay
Data to Output
TPLH
TPHL
VCC = 4.5V
9
+25oC
2
19
ns
10, 11
+125oC, -55oC
2
23
ns
Enable to Output
TPZL
TPZH
VCC = 4.5V
9
+25oC
2
26
ns
10, 11
+125oC, -55oC
2
30
ns
Disable to Output
TPLZ
TPHZ
VCC = 4.5V
9
+25oC
2
28
ns
10, 11
+125oC, -55oC
2
33
ns
NOTES:
1. All voltages referenced to device GND.
2. AC measurements assume RL = 500
, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER
SYMBOL
CONDITIONS
NOTES
TEMPERATURE
LIMITS
UNITS
MIN
MAX
Capacitance Power
Dissipation
CPD
VCC = 5.0V, f = 1MHz
1
+25oC
Typical 45
pF
1
+125oC, -55oC
Typical 45
pF
Input Capacitance
CIN
VCC = Open, f = 1MHz
1
+25oC
-
10
pF
1
+125oC, -55oC
-
10
pF
Output Transition
Time
TTHL
TTLH
VCC = 4.5V
1
+25oC
-
12
ns
1
+125oC, -55oC
-
18
ns
NOTES:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly
tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics.
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETERS
SYMBOL
(NOTES 1, 2)
CONDITIONS
TEMP-
ERATURE
200K RAD
LIMITS
1M RAD
LIMITS
UNITS
MIN
MAX
MIN
MAX
Quiescent Current
ICC
VCC = 5.5V, VIN = VCC or GND
+25oC
-
0.75
-
3.75
mA
Output Current (Sink)
IOL
VCC = 4.5V, VIN = VCC or GND,
VOUT = 0.4V
+25oC6.0
-
5.0
-
mA
Output Current
(Source)
IOH
VCC = 4.5V, VIN = VCC or GND,
VOUT = VCC -0.4V
+25oC-6.0
-
-5.0
-
mA
Output Voltage Low
VOL
VCC = 4.5V and 5.5V,
VIH = 0.70(VCC),
VIL = 0.30(VCC) at 200K RAD,
VIL = 0.12(VCC) at 1M RAD,
IOL = 50
A
+25oC
-
0.1
-
0.1
V
Output Voltage High
VOH
VCC = 4.5V and 5.5V,
VIH = 0.70(VCC),
VIL = 0.30(VCC) at 200K RAD,
VIL = 0.12(VCC) at 1M RAD,
IOH = -50
A
+25oCVCC
-0.1
-VCC
-0.1
-V
Input Leakage Current
IIN
VCC = 5.5V, VIN = VCC or GND
+25oC-
5-
5
A
Three-State Output
Leakage Current
IOZ
Applied Voltage = 0V or VCC
+25oC-
50
-
100
A



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