Electrical Characteristics Tc = 25 C unless otherwise noted

Parameter

Symbol

Min

Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Threshold Voltage

Static Drain-Source

On-Resistance

BVDSS

IDSS

IGSSR

IGSSF

0.65

0.55

2.5

4.5

-100

100

1

W

V

nA

nA

µ

A

V

2

Gate Body Leakage Current, Reverse

On Characteristics b

Dynamic Characteristics c

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Switching Characteristics c

Turn-On Delay Time

Turn-Off Fall Time

Turn-Off Delay Time

Turn-On Rise Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage b

Test Condition

VGS = 0V, ID = 250µA

VGS(th)

RDS(on)

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

Typ

Max

650

VDS = 650V, VGS = 0V

VGS = 30V, VDS = 0V

VGS = -30V, VDS = 0V

VGS = VDS, ID = 250µA

VGS = 10V, ID = 5A

VDD = 300V, ID =3.5A,

VGS = 15V, RGEN = 10W

VDS = 480V, ID = 3.5A,

VGS = 10V

VDS = 150V, VGS = 0V,

f = 1.0 MHz

485

55

20

20

7

41

10

12

2.2

5.3

7

1.5

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

A

V

IS f

VGS = 0V, IS = 5A g

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature .

b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .

c.Guaranteed by design, not subject to production testing.

d.Limited only by maximum temperature allowed .

e.Pulse width limited by safe operating area .

f.Full package IS(max) = 4.6A .

g.Full package VSD test condition IS = 4.6A .

h.L = 60mH, IAS = 2A, VDD = 50V, RG = 25W, Starting TJ = 25 C.

CEP07N65SA/CEB07N65SA

CEF07N65SA

244

1.66

ns

u

C

Reverse Recovery Time

Reverse Recovery Charge

Trr

Qrr

IF = 5A,

di /dt = 100A/us

Peak Reverse Recovery Current

Irr

A

12