PBLS2004D_1

© Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet

Rev. 01— 23 June 2005

3 of 16

Philips Semiconductors

PBLS2004D

20 V PNP BISS loadswitch

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

[3]

Device mounted on a ceramic PCB, Al2O3, standard footprint.

TR2; NPN resistor-equipped transistor

VCBO

collector-base voltage

open emitter

-

50

V

VCEO

collector-emitter voltage

open base

-

50

V

VEBO

emitter-base voltage

open collector

-

10

V

VI

input voltage

positive

-

+40

V

negative

-

−10

V

IO

output current

-

100

mA

ICM

peak collector current

tp ≤ 300 µs

-

100

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

[1] -

200

mW

Per device

Ptot

total power dissipation

[1] -

400

mW

[2] -

530

mW

[3] -

600

mW

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

−65

+150

°C

(1) Ceramic PCB, Al2O3, standard footprint

(2) FR4 PCB, mounting pad for collector 1 cm2

(3) FR4 PCB, standard footprint

Fig 1.

Power derating curves

Table 5:

Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Tamb (°C)

0

160

120

40

80

006aaa414

0.4

0.2

0.6

0.8

Ptot

(W)

0

(1)

(2)

(3)