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BCV64B

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Product data sheet

Rev. 4 — 2 August 2010

3 of 12

Nexperia

BCV64B

PNP general-purpose double transistor

5.

Limiting values

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB).

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB.

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per transistor

VEBO

emitter-base voltage

open collector

-

−6V

IC

collector current

-

−100

mA

ICM

peak collector current

-

−200

mA

IB

base current

-

−100

mA

Transistor TR1

VCBO

collector-base voltage

open emitter

-

−30

V

VCEO

collector-emitter voltage

open base

-

−30

V

Transistor TR2

VCBO

collector-base voltage

open emitter

-

−6V

VCEO

collector-emitter voltage

open base

-

−6V

Per device

Ptot

total power dissipation

Tamb ≤ 25 °C

[1] -250

mW

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

−65

+150

°C

Tstg

storage temperature

−65

+150

°C

Table 7.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1] -

-

500

K/W