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Motor de Búsqueda de Datasheet de Componentes Electrónicos |
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Motor de Búsqueda de Datasheet de Componentes Electrónicos |
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STM8AF6366TCY Datasheet(PDF) 73 Page - STMicroelectronics |
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STM8AF6366TCY Datasheet(HTML) 73 Page - STMicroelectronics |
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73 / 116 page  DocID031156 Rev 1 73/116 STM8AF6388 Electrical characteristics 114 Table 35. Data memory Symbol Parameter Condition Min Max Unit TWE Temperature for writing and erasing - -40 150 °C NWE Data memory endurance(1) (erase/write cycles) 1. The physical granularity of the memory is four bytes, so cycling is performed on four bytes even when a write/erase operation addresses a single byte. TA = 25 °C 300 k - cycles TA = -40°C to 125 °C 100 k(2) 2. More information on the relationship between data retention time and number of write/erase cycles is available in a separate technical document. - tRET Data retention time TA = 25 °C 40(2)(3) 3. Retention time for 256B of data memory after up to 1000 cycles at 125 °C. - years TA = 55 °C 20(2)(3) - |
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