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STM8AF6366TAY Datasheet(PDF) 70 Page - STMicroelectronics |
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STM8AF6366TAY Datasheet(HTML) 70 Page - STMicroelectronics |
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70 / 116 page ![]() Electrical characteristics STM8AF6388 70/116 DocID031156 Rev 1 10.3.4 Internal clock sources and timing characteristics Subject to general operating conditions for VDD and TA. High-speed internal RC oscillator (HSI) Figure 21. Typical HSI frequency vs VDD Table 31. HSI oscillator characteristics Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency - - 16 - MHz ACCHS HSI oscillator user trimming accuracy Trimmed by the application for any VDD and TA conditions -1 - 1 % HSI oscillator accuracy (factory calibrated) VDD = 3.0 V ≤ VDD ≤ 5.5 V, -40 °C ≤ TA ≤ 150 °C -5 - 5 tsu(HSI) HSI oscillator wakeup time - - - 2(1) 1. Guaranteed by characterization results, not tested in production. µs -3% -2% -1% 0% 1% 2% 3% 2.53 3.544.5 5 5.5 6 VDD [V] -40°C 25°C 85°C 125°C |
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