BFG25ASLASHX datasheet(5/12 Pages) NXP

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NXP Semiconductors

Product speciﬁcation

NPN 5 GHz wideband transistor

BFG25A/X

Fig.6

Gain as a function of collector current;

typical values.

VCE = 1 V; f = 500 MHz.

GUM = maximum unilateral power gain;

MSG = maximum stable gain.

handbook, halfpage

MCD141

gain

(dB)

(mA)

1.0

2.5

0.5

1.5

2.0

MSG

GUM

Fig.7

Gain as a function of collector current;

typical values.

VCE = 1 V; f = 1 GHz.

GUM = maximum unilateral power gain;

MSG = maximum stable gain.

handbook, halfpage

1.0

2.5

MCD142

0.5

1.5

2.0

gain

(dB)

(mA)

MSG

GUM

Fig.8

Gain as a function of frequency;

typical values.

IC = 0.5 mA; VCE =1V.

GUM = maximum unilateral power gain;

MSG = maximum stable gain.

handbook, halfpage

MCD143

gain

(dB)

f (MHz)

GUM

MSG

Fig.9

Gain as a function of frequency;

typical values.

IC = 1 mA; VCE =1V.

GUM = maximum unilateral power gain;

MSG = maximum stable gain.

handbook, halfpage

MCD144

gain

(dB)

f (MHz)

GUM

MSG

Rev. 04 - 27 November 2007

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