DATA SHEET

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P15659EJ1V0DS00 (1st edition)

Date Published August 2001 NS CP(K)

Printed in Japan

©

2001

NPN SILICON RF TRANSISTOR

2SC5753

NPN SILICON RF TRANSISTOR FOR

MEDIUM OUTPUT POWER AMPLIFICATION (60 mW)

FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD

FEATURES

• Ideal for medium output power amplification

•PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm

• HFT3 technology (fT = 12 GHz) adopted

• High reliability through use of gold electrodes

• Flat-lead 4-pin thin-type super minimold package

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC5753

50 pcs (Non reel)

• 8 mm wide embossed taping

2SC5753-T2

3 kpcs/reel

• Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape

Remark To order evaluation samples, consult your NEC sales representative.

Unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25

°°°°C)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

VCBO

9.0

V

Collector to Emitter Voltage

VCEO

6.0

V

Emitter to Base Voltage

VEBO

2.0

V

Collector Current

IC

100

mA

Total Power Dissipation

Ptot

Note

205

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

−65 to +150

°C

Note Mounted on 1.08 cm

2

× 1.0 mm (t) glass epoxy PCB

Because this product uses high-frequency technology, avoid excessive static electricity, etc.