Nexperia

2PD601ASW

50 V, 100 mA NPN general purpose transistor

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VCB = 60 V; IE = 0 A; Tamb = 25 °C

-

-

10

nA

ICBO

collector-base cut-off

current

VCB = 60 V; IE = 0 A; Tj = 150 °C

-

-

5

µA

IEBO

emitter-base cut-off

current

VEB = 5 V; IC = 0 A; Tamb = 25 °C

-

-

10

nA

VCE = 2 V; IC = 100 mA; tp ≤ 300 µs;

δ ≤ 0.02; Tamb = 25 °C

90

-

-

hFE

DC current gain

VCE = 10 V; IC = 2 mA; Tamb = 25 °C

290

-

460

VCEsat

collector-emitter

saturation voltage

IC = 100 mA; IB = 10 mA; tp ≤ 300 µs;

δ ≤ 0.02; Tamb = 25 °C

-

-

250

mV

Cc

collector capacitance

VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz;

Tamb = 25 °C

-

-

3

pF

fT

transition frequency

VCE = 10 V; IC = 2 mA; f = 100 MHz;

Tamb = 25 °C

100

-

-

MHz

aaa-035232

200

400

600

hFE

0

IC (mA)

10-1

102

10

1

(1)

(2)

(3)

VCE = 10 V

(1) Tamb = 150 °C

(2) Tamb = 25 °C

(3) Tamb = -55 °C

Fig. 3. DC current gain as a function of collector

current; typical values

VCE (V)

0

10

8

4

6

2

aaa-035233

0.04

0.08

0.12

IC

(A)

0

450 µA

IB = 500 µA

400 µA

350 µA

300 µA

250 µA

200 µA

150 µA

100 µA

50 µA

Tamb = 25 °C

Fig. 4. Collector current as a function of collector-

emitter voltage; typical values

2PD601ASW

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Product data sheet

1 October 2022

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