Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

-

3

A

ISDM (1)

Source-drain current

(pulsed)

12

VSD (2)

Forward on voltage

ISD = 3 A, VGS = 0 V

-

1.6

V

trr

Reverse recovery time

ISD = 3 A, di/dt = 100 A/µs

VDD = 40 V, TJ = 150 °C

(see Figure 17. Test circuit for inductive

load switching and diode recovery times)

-

510

ns

Qrr

Reverse recovery charge

2.2

μC

IRRM

Reverse recovery current

8.7

A

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.

Table 8. Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)GSO

Gate-source breakdown

voltage

IGS = ±1 mA, ID = 0 A

30

-

-

V

The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device.

The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for

additional external componentry.

STD3NK90ZT4, STP3NK90Z, STP3NK90ZFP

Electrical characteristics

DS2980 - Rev 3

page 4/24