TPCF8303 datasheet(1/4 Pages) TOSHIBA

No. de pieza	TPCF8303

Descripción Electrónicos	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)

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Fabricante Electrónico	TOSHIBA [Toshiba Semiconductor]

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TPCF8303

2003-07-16

1

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)

TPCF8303

Notebook PC Applications

Portable Equipment Applications

• Low drain-source ON resistance: RDS (ON) = 58 mΩ (typ.)

• High forward transfer admittance: |Yfs| = 6.0 S (typ.)

• Low leakage current: IDSS = −10 µA (max) (VDS = −20 V)

• Enhancement-model: Vth = −0.45 to −1.2 V

(VDS = −10 V, ID = −200 µA)

Maximum Ratings (Ta

==== 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

VDSS

-20

V

Drain-gate voltage (RGS = 20 kΩ)

VDGR

-20

V

Gate-source voltage

VGSS

±8

V

DC

(Note 1)

ID

-3.0

Drain current

Pulse

(Note 1)

IDP

-12

A

Single-device operation

(Note 3a)

PD (1)

1.35

Drain power

dissipation

(t

= 5 s) (Note 2a) Single-device value at

dual operation (Note 3b)

PD (2)

1.12

Single-device operation

(Note 3a)

PD (1)

0.53

Drain power

dissipation

(t

= 5 s) (Note 2b) Single-device value at

dual operation (Note 3b)

PD (2)

0.33

W

Single pulse avalanche energy

(Note 4)

EAS

0.58

mJ

Avalanche current

IAR

-1.5

A

Repetitive avalanche energy

Single-device value at dual operation

(Note 2a, 3b, 5)

EAR

0.11

mJ

Channel temperature

Tch

150

°C

Storage temperature range

Tstg

-55~150

°C

Note: For (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) and (Note 6),

please refer to the next page.

This transistor is an electrostatic sensitive device. Please handle with

caution.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-3U1B

Weight: 0.011 g (typ.)

Circuit Configuration

Marking (Note 6)

8

1

5

4

F5C

1

2

3

4

8

7

6

5

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