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STGD4M65DF2 Datasheet(PDF) 4 Page - STMicroelectronics

No. de pieza STGD4M65DF2
Descripción Electrónicos  Trench gate field-stop, 650 V, 4 A, M series low-loss IGBT
PDF  20 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGD4M65DF2 Datasheet(HTML) 4 Page - STMicroelectronics

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Table 5. IGBT switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
td(on)
Turn-on delay time
VCE = 400 V, IC = 4 A, VGE = 15 V, RG = 47 Ω
(see Figure 28. Test circuit for inductive load switching )
12
-
ns
tr
Current rise time
6.9
-
ns
(di/dt)on Turn-on current slope
480
-
A/µs
td(off)
Turn-off delay time
86
-
ns
tf
Current fall time
120
-
ns
Eon (1)
Turn-on switching
energy
0.040
-
mJ
Eoff (2)
Turn-off switching
energy
0.136
-
mJ
Ets
Total switching energy
0.176
-
mJ
td(on)
Turn-on delay time
VCE = 400 V, IC = 4 A, VGE = 15 V, RG = 47 Ω, TJ = 175 °C
(see Figure 28. Test circuit for inductive load switching)
11.6
-
ns
tr
Current rise time
8
-
ns
(di/dt)on Turn-on current slope
410
-
A/µs
td(off)
Turn-off delay time
85
-
ns
tf
Current fall time
211
-
ns
Eon (1)
Turn-on switching
energy
0.067
-
mJ
Eoff (2)
Turn-off switching
energy
0.210
-
mJ
Ets
Total switching energy
0.277
-
mJ
tsc
Short-circuit withstand
time
VCC ≤ 400 V, VGE = 15 V, TJstart = 150 °C
6
-
µs
VCC ≤ 400 V, VGE = 13 V, TJstart = 150 °C
10
-
1. Including the reverse recovery of the diode.
2. Including the tail of the collector current.
Table 6. Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
trr
Reverse recovery time
IF = 4 A, VR = 400 V, VGE = 15 V, di/dt = 800 A/µs (see
Figure 28. Test circuit for inductive load switching)
-
133
-
ns
Qrr
Reverse recovery charge
-
140
-
nC
Irrm
Reverse recovery current
-
5
-
A
dIrr/dt
Peak rate of fall of
reverse recovery current
during tb
-
520
-
A/µs
Err
Reverse recovery energy
-
15
-
µJ
trr
Reverse recovery time
IF = 4 A, VR = 400 V, VGE = 15 V, TJ = 175 °C, di/dt = 800 A/µs
(see Figure 28. Test circuit for inductive load switching)
-
236
-
ns
Qrr
Reverse recovery charge
-
370
-
nC
Irrm
Reverse recovery current
-
6.6
-
A
dIrr/dt
Peak rate of fall of
reverse recovery current
during tb
-
378
-
A/µs
Err
Reverse recovery energy
-
32
-
µJ
STGD4M65DF2
Electrical characteristics
DS11397 - Rev 5
page 4/20



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