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74HC1G66GV Datasheet(PDF) 2 Page - NXP Semiconductors

No. de pieza 74HC1G66GV
Descripción Electrónicos  Bilateral switch
PDF  20 Pages
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Fabricante Electrónico  PHILIPS [NXP Semiconductors]
Página de inicio  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

74HC1G66GV Datasheet(HTML) 2 Page - NXP Semiconductors

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2002 May 15
2
Philips Semiconductors
Product specification
Bilateral switch
74HC1G66; 74HCT1G66
FEATURES
• Wide operating voltage range from 2.0 to 9.0 V
• Very low ON-resistance:
–45
Ω (typical) at VCC = 4.5 V
–30
Ω (typical) at VCC = 6.0 V
–25
Ω (typical) at VCC = 9.0 V.
• High noise immunity
• Low power dissipation
• Very small 5 pins package
• Output capability: non standard.
DESCRIPTION
The 74HC1G/HCT1G66 is a high-speed Si-gate CMOS
device.
The 74HC1G/HCT1G66 provides an analog switch. The
switch has two input/output pins (Y and Z) and an active
HIGH enable input pin (E). When pin E is LOW, the analog
switch is turned off.
The non standard output currents are equal compared to
the 74HC/HCT4066.
QUICK REFERENCE DATA
GND = 0 V; Tamb =25 °C; tr =tf = 6.0 ns.
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW).
PD =CPD × VCC2 × fi + ∑ ((CL +CS)× VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
CS = maximum switch capacitance in pF;
VCC = supply voltage in Volts;
∑ ((CL +CS)× VCC2 × fo) = sum of outputs.
2. For HC1G the condition is VI = GND to VCC.
For HCT1G the condition is VI = GND to VCC − 1.5 V.
FUNCTION TABLE
See note 1.
Note
1. H = HIGH voltage level;
L = LOW voltage level.
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
HC1G
HCT1G
tPZH/tPZL
turn-on time E to Vos
CL = 15 pF; RL =1kΩ; VCC = 5 V 11
12
ns
tPHZ/tPLZ
turn-off time E to Vos
CL = 15 pF; RL =1kΩ; VCC = 5 V 11
12
ns
CI
input capacitance
1.5
1.5
pF
CPD
power dissipation capacitance
notes 1 and 2
9
9
pF
CS
maximum switch capacitance
8
8
pF
INPUT E
SWITCH
L
OFF
HON



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