STBV32-AP datasheet(3/11 Pages) STMICROELECTRONICS

No. de pieza	STBV32-AP

Descripción Electrónicos	High voltage fast-switching NPN power transistor

PDF	11 Pages

Scroll/Zoom	100%

Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

Logo

3 / 11 page

STBV32

Electrical characteristics

3/11

Electrical characteristics

(Tcase = 25 °C; unless otherwise specified)

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

ICES

Collector cut-off current

(VBE = 0)

VCE = 700 V

TC = 125 °C

V(BR)EBO

Emitter-base breakdown

voltage (IC = 0)

IE = 10 mA

VCEO(sus)

(1)

Pulsed duration = 300 µs, duty cycle

≤1.5%

Collector-emitter sustaining

voltage (IB = 0)

IC = 10 mA

400

VCE(sat)

(1) Collector-emitter saturation

voltage

IC = 0.5 A

IB = 100 mA

IC = 1 A

IB = 250 mA

IC = 1.5 A

IB = 500 mA

0.5

1.5

VBE(sat)

(1) Base-emitter saturation

voltage

IC = 0.5 A

IB = 100 mA

IC = 1 A

IB = 250 mA

1.2

hFE

DC current gain

IC = 0.5 mA

VCE = 2 V

IC = 0.5 A

VCE = 2 V

IC = 1 A

VCE = 2 V

Resistive load

Rise time

Storage time

Fall time

IC = 1 A ___ _

tp = 25 µs

IB1 = -IB2 = 200 mA

VCC = 125 V

Figure 12.

0.7

µs

Inductive Load

Storage time

IC = 1 A

Vclamp = 300 V

IB1 = 200 mA

VBE(off) = -5 V

L = 50 mH

RBB = 0

Figure 13.

0.8

µs

STBV32-AP Datasheet(PDF) 3 Page - STMicroelectronics

STBV32-AP Datasheet(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11

Datasheet Descarga

Enlace URL