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TPD2017FN Datasheet(PDF) 7 Page - Toshiba Semiconductor

No. de pieza TPD2017FN
Descripción Electrónicos  Toshiba Intelligent Power Device Silicon Monolithic MOS Integrated Circuit
PDF  17 Pages
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPD2017FN Datasheet(HTML) 7 Page - Toshiba Semiconductor

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TPD2017FN
2022-03-15
7
© 2022
Toshiba Electronic Devices & Storage Corporation
8. Absolute Maximum Ratings
Table 8.1 Absolute Maximum Ratings
(Ta = 25℃ unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Supply voltage
VDD
−0.3 to 6.0
V
Input voltage
VIN
−0.3 to 6.0
V
Output withstand voltage
VOUT
50.01)
V
Output current
IOUT
Internally
limited
A
Power dissipation
(operation all channels, Ta=25℃ )
PD
1.8
W
Operating temperature
Topr
−40 to 110
°C
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to 150
°C
Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and
the significant change in temperature, etc.) may cause this product to decrease in the reliability
significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within
the absolute maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability
test report and estimated failure rate, etc).
1) Not subject to production test
8.1. Thermal Resistance
Table 8.2 Thermal resistance
Characteristics
Symbol
Rating
Unit
Thermal resistance
( junction to ambient )
Rth (j–a)
70
°C / W
Note:
JEDEC Standard.
Glass epoxy board
Material: FR-4(4 layer)
Board size: 76.2mmx114.3mmx1.6mm



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