2PD602AS datasheet(3/8 Pages) PHILIPS

No. de pieza	2PD602AS

Descripción Electrónicos	NPN general purpose transistor

PDF	8 Pages

Scroll/Zoom	100%

Fabricante Electrónico	PHILIPS [NXP Semiconductors]

Página de inicio	http://www.nxp.com

Logo

3 / 8 page

1999 Apr 23

Philips Semiconductors

Product speciﬁcation

NPN general purpose transistor

2PD602A

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =60V

−

IE = 0; VCB =60V; Tj = 150 °C

−

µA

IEBO

emitter cut-off current

IC = 0; VEB =4V

−

hFE

DC current gain

IC = 150 mA; VCE = 10 V; note 1

2PD602AQ

170

2PD602AR

120

240

2PD602AS

170

340

DC current gain

IC = 500 mA; VCE = 10 V; note 1

−

VCEsat

collector-emitter saturation

voltage

IC = 300 mA; IB = 30 mA; note 1

−

600

collector capacitance

IE =ie = 0; VCB = 10 V; f = 1 MHz

−

transition frequency

IC = 50 mA; VCE =10V;

f = 100 MHz; note 1

2PD602AQ

140

−

MHz

2PD602AR

160

−

MHz

2PD602AS

180

−

MHz

2PD602AS Datasheet(PDF) 3 Page - NXP Semiconductors

2PD602AS Datasheet(HTML) 3 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8

Datasheet Descarga

Enlace URL