2PB709AS datasheet(3/8 Pages) PHILIPS

No. de pieza	2PB709AS

Descripción Electrónicos	PNP general purpose transistor

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Fabricante Electrónico	PHILIPS [NXP Semiconductors]

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1999 Apr 23

Philips Semiconductors

Product speciﬁcation

PNP general purpose transistor

2PB709A

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −45 V

−−10

IE = 0; VCB = −45 V; Tj = 150 °C

−−5

µA

IEBO

emitter cut-off current

IC = 0; VEB = −5V

−−10

hFE

DC current gain

IC = −2 mA; VCE = −10 V

2PB709AQ

160

260

2PB709AR

210

340

2PB709AS

290

460

VCEsat

collector-emitter saturation

voltage

IC = −100 mA; IB = −10 mA; note 1

−−500

collector capacitance

IE =ie = 0; VCB = −10 V; f = 1 MHz

−

5pF

transition frequency

IC = −1 mA; VCE = −10 V; f = 100 MHz

2PB709AQ

−

MHz

2PB709AR

−

MHz

2PB709AS

−

MHz

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