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TFS757 Datasheet(PDF) 8 Page - Power Integrations, Inc. |
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TFS757 Datasheet(HTML) 8 Page - Power Integrations, Inc. |
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8 / 36 page ![]() Rev. E 04/15 8 TFS757-764HG www.power.com Functional Description The HiperTFS contains two switch-mode power supply controllers and associated low-side MOSFET’s along with high-side driver and high-side MOSFET. • The HiperTFS two-switch forward includes a controller along with low-side power MOSFET, high-side power MOSFET and high-side driver. This device operates in voltage mode (linear duty-cycle control) at fixed frequency (exactly half the operat- ing frequency of the standby controller). The control converts a current input (FEEDBACK pin), to a duty-cycle at the open drain MOSFET MAIN DRAIN pin decreasing duty-cycle with increasing sourced current from the FEEDBACK pin. • The HiperTFS flyback includes a controller and power MOSFET which is based on TinySwitch-III. This device operates in multi-level ON/OFF current limit control mode. The open drain MOSFET (STANDBY DRAIN pin) is turned on when the sourced current from the ENABLE pin is below the threshold and switching is disabled when the ENABLE pin current is above the threshold. In addition to the basic features, such as the high-voltage start-up, the cycle-by-cycle current limiting, loop compensation circuitry, auto-restart and thermal shutdown, the HiperTFS main controller incorporates many additional functions that reduce system cost, increase power supply performance and design flexibility. Main Converter General Introduction The Main converter for the HiperTFS, is a two-switch forward converter (although the HiperTFS could be used with other two-switch topologies). This topology involves a low-side and high-side power MOSFET, both of which are switched at the same time. In the case of the HiperTFS, the low-side MOSFET is a 725 V MOSFET (with the substrate connected to the SOURCE pin). The high-side MOSFET is a 530 V MOSFET (with the substrate connected to the HIGH-SIDE DRAIN (HD) pin). As such the substrate of both low-side and high-side MOSFET’s are tied to quiet circuit nodes (0 V and V IN respectively), meaning that both MOSFETs have electrically quiet substrates – good for EMI. The low-side MOSFET has a very low C OSS capacitance and thus can be hard-switched without performance penalty. Due to the external clamp configuration it is possible to substantially soft-switch the high-side MOSFET at high-loads (thus eliminating a large proportion of high-side capacitive switching loss) and improving efficiency. The higher breakdown voltage on the low-side MOSFET allows the transformer reset voltage to exceed the input voltage, and thus allow operation at duty cycles greater than 50%. Higher duty cycle operation leads to lower RMS switch currents and also lower output diode voltage-rating, both of which contribute to improved efficiency. The HiperTFS also contains a high-side driver to control the high-side MOSFET. This internal high-side driver eliminates the need for a gate-driver transformer, an expensive component that is required for many other two-switch forward circuits. Main Start-Up Operation Once the flyback (standby) converter is up and running, the main converter can be enabled by two functions. The first condition is that the BYPASS pin remote-on current must exceed the remote-on threshold (I BP(ON)), provided by an external remote ON/OFF circuit. This current threshold has a hysteresis to prevent noise interference. Once the BYPASS remote-on has been achieved, the HiperTFS also requires that the LINE- SENSE pin current exceeds the UV Main-on (I L(MA-UVON)), which corresponds to approximately 315 VDC input voltage when using a 4 M W LINE-SENSE pin resistor. Once this LINE-SENSE pin threshold has been achieved the HiperTFS will enter a 12 ms pre-charge period (t D(CH)) to allow the PFC-boost stage to reach regulation before the main applies a load to the bulk-capacitor. Also during this pre-charge period the high-side driver is charged via the boot-strap diode from the low-side auxiliary voltage, and is charged when the main low-side MOSFET turns Figure 5. Switching Frequency Jitter (Idealized V DRAIN Waveforms). f OSC - 4 ms Time Switching Frequency VDRAIN f OSC + Figure 6. Supply Start-Up Sequence by Remote ON. VIN Standby Output Main Output 12 ms 385 V Main Primary Current Remote ON 12 ms 32 ms t t t t t PI-5619a-102710 100% ILIM 115% ILIM |
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