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TTC013 Datasheet(PDF) 2 Page - Toshiba Semiconductor

No. de pieza TTC013
Descripción Electrónicos  Bipolar Transistors Silicon NPN Triple-Diffused Type
PDF  7 Pages
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TTC013 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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TTC013
2
5.
5.
5.
5. Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
5.1.
5.1.
5.1.
5.1. Static Characteristics (Unless otherwise specified, T
Static Characteristics (Unless otherwise specified, T
Static Characteristics (Unless otherwise specified, T
Static Characteristics (Unless otherwise specified, Taaaa = 25
= 25
= 25
= 25
))))
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
ICBO
IEBO
V(BR)CEO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(sat)
Test Condition
VCB = 600 V, IE = 0 A
VEB = 7 V, IC = 0 A
IC = 10 mA, IB = 0 A
VCE = 5 V, IC = 1 mA
VCE = 5 V, IC = 50 mA
VCE = 5 V, IC = 0.16 A
IC = 0.16 A, IB = 20 mA
IC = 0.16 A, IB = 20 mA
Min
350
80
100
30
Typ.
Max
1
1
200
0.3
1.1
Unit
µA
V
V
5.2.
5.2.
5.2.
5.2. Dynamic Characteristics (Unless otherwise specified, T
Dynamic Characteristics (Unless otherwise specified, T
Dynamic Characteristics (Unless otherwise specified, T
Dynamic Characteristics (Unless otherwise specified, Taaaa = 25
= 25
= 25
= 25
))))
Characteristics
Switching time (rise time)
Switching time (storage time)
Switching time (fall time)
Symbol
tr
tstg
tf
Test Condition
See Figure 5.2.1
VCC
≈ 200 V, RL = 1.25 kΩ,
IB1 = 20 mA, IB2 = 40 mA,
Duty cycle ≤ 1%
Min
Typ.
0.12
3.2
0.17
Max
Unit
µs
Fig.
Fig.
Fig.
Fig. 5.2.1
5.2.1
5.2.1
5.2.1 Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
2015-08-04
Rev.3.0
©2015 Toshiba Corporation



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