M25PE20 datasheet(25/37 Pages) STMICROELECTRONICS

25 / 37 page

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M25PE10, M25PE20

Table 7. Power-Up Timing and VWI Threshold

Note: 1. These parameters are characterized only, over the temperature range –40°C to +85°C.

INITIAL DELIVERY STATE

The device is delivered with the memory array

erased: all bits are set to 1 (each Byte contains

FFh). All usable Status Register bits are 0.

MAXIMUM RATING

Stressing the device above the rating listed in the

Absolute Maximum Ratings table may cause per-

manent damage to the device. These are stress

ratings only and operation of the device at these or

any other conditions above those indicated in the

Operating sections of this specification is not im-

plied. Exposure to Absolute Maximum Rating con-

ditions for extended periods may affect device

reliability. Refer also to the STMicroelectronics

SURE Program and other relevant quality docu-

ments.

Table 8. Absolute Maximum Ratings

Note: 1. Compliant with JEDEC Std J-STD-020C (for small body, Sn-Pb or Pb assembly), the ST ECOPACK® 7191395 specification, and

the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU.

2. JEDEC Std JESD22-A114A (C1=100 pF, R1=1500

Ω, R2=500 Ω)

Symbol

Parameter

Min.

Max.

Unit

tVSL1

VCC(min) to S low

µs

tPUW1

Time delay before the first Write, Program or Erase instruction

VWI1

Write Inhibit Voltage

1.5

2.5

Symbol

Parameter

Min.

Max.

Unit

TSTG

Storage Temperature

–65

150

°C

TLEAD

Lead Temperature during Soldering

See note 1

°C

VIO

Input and Output Voltage (with respect to Ground)

–0.6

4.0

VCC

Supply Voltage

–0.6

4.0

VESD

Electrostatic Discharge Voltage (Human Body model) 2

–2000

2000

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