DS30425 Rev. 5 - 2

3 of 4

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DCX (LO-R1) U

© Diodes Incorporated

Electrical Characteristics PNP Section @TA = 25°C unless otherwise specified

R1, R2 Types

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

DCX122LU

DCX142JU

Vl(off)

-0.3

-0.3

⎯

⎯

V

VCC = -5V, IO = -100μA

Input Voltage

DCX122LU

DCX142JU

Vl(on)

⎯

⎯

-2.0

-2.0

V

VO = -0.3V, IO = -20mA

VO = -0.3V, IO = -20mA

Output Voltage

VO(on)

⎯

⎯

-0.3V

V

IO/Il = -5mA/-0.25mA

Input Current

DCX122LU

DCX142JU

Il

⎯

⎯

-28

-13

mA VI = -5V

Output Current

IO(off)

⎯

⎯

-0.5

μA VCC = -50V, VI = 0V

DC Current Gain

DCX122LU

DCX142JU

Gl

56

56

⎯

⎯

⎯

VO = -5V, IO = -10mA

Gain-Bandwidth Product*

fT

⎯

200

⎯

MHz VCE = -10V, IE = -5mA, f = 100MHz

* Transistor - For Reference Only

Electrical Characteristics PNP Section

@TA = 25°C unless otherwise specified

R1 Only Types

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

-50

⎯

⎯

V

IC = -50μA

Collector-Emitter Breakdown Voltage

BVCEO

-40

⎯

⎯

V

IC = -1mA

Emitter-Base Breakdown Voltage

DCX122TU

DCX142TU

BVEBO

-5

⎯

⎯

V

IE = -50μA

IE = -50μA

Collector Cutoff Current

ICBO

⎯

⎯

-0.5

μA

VCB = -50V

Emitter Cutoff Current

DCX122TU

DCX142TU

IEBO

⎯

⎯

⎯

-0.5

-0.5

μA

VEB = -4V

Collector-Emitter Saturation Voltage

VCE(sat)

⎯

⎯

-0.3

V

IC = -5mA, IB = -0.25mA

DC Current Transfer Ratio

DCX122TU

DCX142TU

hFE

100

100

250

250

600

600

⎯

IC = -1mA, VCE = -5V

Gain-Bandwidth Product*

fT

⎯

200

⎯

MHz VCE = -10V, IE = 5mA, f = 100MHz

* Transistor - For Reference Only

-50

050

100

250

200

150

50

100

0

T , AMBIENT TEMPERATURE ( C)

Fig. 1 Power Derating Curve

A

°

150

(150mW per element must not be exceeded).