MS3024 datasheet(1/4 Pages) ADPOW

No. de pieza	MS3024

Descripción Electrónicos	RF AND MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

PDF	4 Pages

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Fabricante Electrónico	ADPOW [Advanced Power Technology]

Página de inicio	http://www.advpowertech.com

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MS3024

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

DESCRIPTION:

The MS3024 is a common base hermetically sealed silicon NPN

microwave transistor that utilizes a fishbone emitter ballasted

geometry with a refractory/gold metallization system. This device is

capable of withstanding an infinite load VSWR at any phase angle

under rated conditions. The MS3024 was designed for Class C

amplifier applications in the 1.0 – 2.0 GHz frequency range.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

Parameter

Value

Unit

VCC

Collector-Supply Voltage

35

V

IC

Device Current

1

A

PDISS

Power Dissipation

29

W

TJ

Junction Temperature

200

°°C

TSTG

Storage Temperature

–65 to +200

°°C

THERMAL DATA

RTH(j-c)

Junction-Case Thermal Resistance

6

°°C/W

Features

• EMITTER BALLASTED

• INFINITE VSWR CAPABILITY AT RATED CONDITIONS

• REFRACTORY/GOLD METALLIZATION

• HERMETIC STRIPAC®® PACKAGE

• P

OUT = 5.0 W MIN. WITH 7.0 dB GAIN AT 2.0 GHz

RF AND MICROWAVE TRANSISTORS

GENERAL PURPOSE AMPLIFIER APPLICATIONS

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

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MS3024 Datasheet(PDF) 1 Page - Advanced Power Technology

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