MSC0XXXA.DOC 5-13-99

MS2223

ABSOLUTE

ABSOLUTE MAXIMUM

MAXIMUM RATINGS

RATINGS

(Tcase = 25°°C)

Symbol

Parameter

Value

Unit

Collector-Supply Voltage*

32

V

Device Current*

8.0

A

Power Dissipation*

200

W

Junction Temperature

200

°°C

Storage Temperature

- 65 to + 200

°°C

Thermal Data

Thermal Data

Junction-Case Thermal Resistance*

0.68

°°C/W

* Applies only to rated RF operation.

Features

· GOLD METALLIZATION

· EMITTER SITE BALLASTED

· Pout = 70 W MINIMUM

· Gp = 6.7 dB

· OVERLAY GEOMETRY

· METAL/CERAMIC HERMETIC PACKAGE

· LOW THERMAL RESISTANCE

DESCRIPTION:

DESCRIPTION:

The MS2223 is a silicon NPN bipolar transistor designed for

avionics applications with high duty cycle requirements. Gold

metallization and emitter ballasting provides long term

reliability under long pulse formats.

RF & MICROWAVE TRANSISTORS

AVIONICS APPLICATIONS

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein.

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