MS1280 datasheet(1/3 Pages) ADPOW

No. de pieza	MS1280

Descripción Electrónicos	RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS

PDF	3 Pages

Scroll/Zoom	100%

Fabricante Electrónico	ADPOW [Advanced Power Technology]

Página de inicio	http://www.advpowertech.com

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MS1280

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

DESCRIPTION:

The MS1280 is a gold metallized epitaxial silicon NPN

transistor designed for high linearity class AB operation.

Internal impedance matching and an emitter ballasted

die geometry make this devise ideally suited for VHF and

Band lll television transmitter and transposers.

ABSOLUTE MAXIMUM RATINGS

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

60

V

VCEO

Collector-Emitter Voltage

30

V

VEBO

Emitter-Base Voltage

4.0

V

IC

Device Current

16

A

PDISS

Power Dissipation

150

W

TJ

Junction Temperature

+200

°°C

TSTG

Storage Temperature

-65 to +150

°°C

Therm

Thermal Data

al Data

RTH(J-C)

Thermal Resistance Junction-case

1.2

°°C/W

Features

• 170-230 MHz

• 28 VOLTS

• IMD = -53 dBc

• P

OUT = 20 WATTS

• G

P = 7.5

dB MINIMUM

• COMMON EMITTER CONFIGURATION

RF & MICROWAVE TRANSISTORS

TV/LINEAR APPLICATIONS

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

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