MAXIMUM RATINGS

All Ratings: T

C

= 25°C unless otherwise specified.

Symbol

BV

DSS

V

I

DSS

I

GSS

g

fs

g

fs1

/

g

fs2

V

∆V

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

GS

= 0V, I

D

= 250 µA)

= 5A, V

GS

= 10V)

Zero Gate Voltage Drain Current (V

DS

= V

DSS

, V

GS

= 0V)

Zero Gate Voltage Drain Current (V

DS

= 50V, V

GS

= 0, T

C

= 125°C)

Gate-Source Leakage Current (V

GS

= ±30V, V

DS

= 0V)

Forward Transconductance (V

DS

= 15V, I

D

= 5A)

Forward Transconductance Match Ratio (V

DS

= 15V, I

D

= 5A)

Gate Threshold Voltage (V

DS

= V

GS

, I

D

= 200mA)

Gate Threshold Voltage Match (V

DS

= V

GS

, I

D

= 200mA)

MIN

TYP

MAX

500

2.9

4

25

250

±100

3

3.6

0.9

1.1

2

3.3

4

0.2

UNIT

Volts

µA

nA

mhos

Volts

Symbol

V

DSS

V

DGO

I

D

V

GS

P

D

T

J

,T

STG

T

L

Parameter

Drain-Source Voltage

Drain-Gate Voltage

Continuous Drain Current @ T

C

= 25°C

(each device)

Gate-Source Voltage

Total Device Dissipation @ T

C

= 25°C

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

ARF475FL

500

500

10

±30

483

-55 to 175

300

UNIT

Volts

Amps

Volts

Watts

°C

RF POWER MOSFET

N - CHANNEL ENHANCEMENT MODE

165V

300W 150MHz

The ARF475FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage

push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.

•

Output Power = 900 Watts Peak

•

Gain = 15dB (Class AB)

•

Efficiency = 50% min

for Superior Ruggedness.

ARF475FL

Common Source

Push-Pull Pair

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

THERMAL CHARACTERISTICS

Symbol

Characteristic

Junction to Case

MIN

TYP

MAX

0.31

0.1

UNIT

°C/W

G

G

D

S

S

S

S

D