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DF2S6M4FS Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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DF2S6M4FS Datasheet(HTML) 1 Page - Toshiba Semiconductor |
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1 / 9 page ![]() DF2S6M4FS 1 ESD Protection Diodes Silicon Epitaxial Planar DF2S6M4FS DF2S6M4FS DF2S6M4FS DF2S6M4FS Start of commercial production 2019-09 1. 1. 1. 1. General General General General The DF2S6M4FS is a TVS diode (ESD protection diode) protects semiconductor devices used in automotive interfaces and other applications to protect against static electricity and noise. Utilizing snapback characteristics, the DF2S6M4FS provides low dynamic resistance and superior protective performance. Furthermore, it is optimum for the high speed signal line because of the low capacitance performance. The DF2S6M4FS is housed in an ultra-compact package (1.0 mm × 0.6 mm) to meet applications that require a small footprint. 2. 2. 2. 2. Applications Applications Applications Applications Automotive Equipment (Interface protection) Advanced Driver-Assistance Systems In-vehicle infotainment Head-Up Display Display Audio Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 3. 3. 3. 3. Features Features Features Features (1) AEC-Q101 qualified (Note 1) (2) Suitable for use with a 5 V signal line. (VRWM ≤ 5.5 V) (3) Protects devices with its high ESD performance. (VESD > ±30 kV (Contact / Air) @ISO10605) (4) Low dynamic resistance protects semiconductor devices from static electricity and noise. (RDYN = 0.35 Ω (typ.)) (5) Snapback characteristics realizing low clamping voltage protects semiconductor devices. (VC = 9 V@IPP = 2 A (typ.)) (6) Compact package is suitable for use in high density board layouts such as in automotive interfaces. (1.0 mm × 0.6 mm size (Nickname: SOD-923)) Note 1: For detail information, please contact to our sales. 4. 4. 4. 4. Packaging Packaging Packaging Packaging SOD-923 2019-11-01 Rev.2.0 ©2019 Toshiba Electronic Devices & Storage Corporation |
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