STGWA60V60DF datasheet(4/20 Pages) STMICROELECTRONICS

No. de pieza	STGWA60V60DF

Descripción Electrónicos	Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

PDF	20 Pages

Scroll/Zoom	100%

Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

Logo

4 / 20 page

Electrical characteristics

STGW60V60DF, STGWA60V60DF, STGWT60V60DF

4/20

DocID024154 Rev 7

Electrical characteristics

TJ = 25 °C unless otherwise specified.

Table 4. Static characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter

breakdown voltage

(VGE = 0)

IC = 2 mA

600

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15 V, IC = 60 A

1.85

2.3

VGE = 15 V, IC = 60 A

TJ = 125 °C

2.15

VGE = 15 V, IC = 60 A

TJ = 175 °C

2.35

Forward on-voltage

IF = 60 A

2.6

IF = 60 A TJ = 125 °C

1.7

IF = 60 A TJ = 175 °C

1.6

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 1 mA

ICES

Collector cut-off current

(VGE = 0)

VCE = 600 V

µA

IGES

Gate-emitter leakage

current (VCE = 0)

VGE = ± 20 V

±250

Table 5. Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Input capacitance

VCE = 25 V, f = 1 MHz,

VGE = 0

-8000

Coes

Output capacitance

280

Cres

Reverse transfer

capacitance

-170

Total gate charge

VCC = 480 V, IC = 60 A,

VGE = 15 V, see Figure 29

-334

Qge

Gate-emitter charge

130

Qgc

Gate-collector charge

STGWA60V60DF Datasheet(PDF) 4 Page - STMicroelectronics

STGWA60V60DF Datasheet(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20

Datasheet Descarga

Enlace URL