1

2

3

TO-220

TAB

C(2, TAB)

E(3)

NG1E3C2T

G(1)

Features

•

High short-circuit withstand time

•

VCE(sat) = 1.55 V (typ.) @ IC = 20 A

•

Tight parameters distribution

•

Safer paralleling

•

Low thermal resistance

•

Soft and very fast recovery antiparallel diode

Applications

•

Motor control

•

UPS

•

PFC

•

General-purpose inverters

Description

This device is an IGBT developed using an advanced proprietary trench gate field-

stop structure. The device is part of the M series IGBTs, which represent an optimal

balance between inverter system performance and efficiency where the low-loss and

the short-circuit functionality is essential. Furthermore, the positive VCE(sat)

temperature coefficient and the tight parameter distribution result in safer paralleling

operation.

Product status link

STGP20M65DF2

Product summary

Order code

STGP20M65DF2

Marking

G20M65DF2

Package

TO-220

Packing

Tube

Trench gate field-stop, 650 V, 20 A, M series low-loss IGBT

STGP20M65DF2

Datasheet

DS11374 - Rev 3 - October 2018

For further information contact your local STMicroelectronics sales office.

www.st.com