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STS2321 Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

No. de pieza STS2321
Descripción Electrónicos  P-Channel Enhancement Mode Field Effect Transistor
PDF  7 Pages
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Fabricante Electrónico  SAMHOP [SamHop Microelectronics Corp.]
Página de inicio  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STS2321 Datasheet(HTML) 2 Page - SamHop Microelectronics Corp.

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ELECTRICAL CHARACTERISTICS (TA 25 C unless otherwise noted)
=
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
=
VGS 0V, ID -250uA
=
-20
V
Zero Gate Voltage Drain Current
IDSS
VDS -16V, VGS 0V
=
=
1
uA
Gate-Body Leakage
IGSS
VGS 10V, VDS 0V
=
=
100 nA
ON CHARACTERISTICSb
Gate Threshold Voltage
VGS(th)
VDS VGS, ID =-250uA
=
-0.6
-1.5
V
Drain-Source On-State Resistance
RDS(ON)
VGS -4.5V, ID -3.2A
50
65
VGS -2.5V, ID -2.0A
75
90
On-State Drain Current
ID(ON)
VDS = -5V, VGS = -4.5V
A
S
Forward Transconductance
FS
g
VDS -5V, ID
DYNAMIC CHARACTERISTICS
c
Input Capacitance
CISS
CRSS
COSS
Output Capacitance
Reverse Transfer Capacitance
VDS = -15V, VGS = 0V
f =1.0MHZ
P
F
P
F
P
F
SWITCHING CHARACTERISTICS
c
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
tD(ON)
tr
tD(OFF)
tf
VDD = -10V,
ID = -1A,
VGS = -4.5V,
RL = 10 ohm
RGEN = 6 ohm
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS = -10V, ID = -3.2A,
VGS = -4.5V
nC
nC
nC
C
Fall Time
=
=
=
=
=
2
m-ohm
m-ohm
8
= -3.2A
8
610
155
105
13.9
7.1
75.2
54
7.4
1.2
2.8
-0.9
STS2321



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