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G1210 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza G1210
Descripción Electrónicos  Standard Recovery Diodes
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

G1210 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
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G1210(R)
Standard Recovery Diodes
FEATURES
·
High surge current capability
·
Stud cathode and stud anode version
·
Designed and qualified for industrial and consumer level
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Battery charges
·
Converters
·
Power supplies
·
Machine tool controls
Case Style DO-4
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VRRM
Repetitive Peak Reverse Voltage
1200
V
IF(AV)
Average Forward Current
TC=144℃,
180° conduction, half sine wave
12
A
IF(RMS)
Max. RMS forward current
19
A
IFSM
Surge Forward Current
t=10ms
No voltage
reapplied
265
A
t=8.3ms
280
t=10ms
100%
VRRM
reapplied
225
t=8.3ms
235
I2t
I2t for fusing
t=10ms
No voltage
reapplied
351
A2s
t=8.3ms
320
t=10ms
100%
VRRM
reapplied
250
t=8.3ms
226
TJ
Junction Temperature
-40~160
℃
Tstg
Storage Temperature
-65~200
℃
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