ES25P40 datasheet(2/35 Pages) EXCELSEMI

No. de pieza	ES25P40

Descripción Electrónicos	4Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface

PDF	35 Pages

Scroll/Zoom	100%

Fabricante Electrónico	EXCELSEMI [Excel Semiconductor Inc.]

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2 / 35 page

ES I

Rev. 0D May 11 , 2006

ES25P40

Excel Semiconductor inc.

ADVANCED INFORMATION

The ES25P40 device is a 3.0 volt (2.7V to 3.6V)

single power flash memory device. ES25P40 con-

sists of Eight sectors, each with 512 Kb memory.

Data appears on SI input pin when inputting data

into the memory and on the SO output pin when

outputting data from the memory. The devices are

designed to be programmed in-system with the

standard system 3.0 volt Vcc supply.

The memory can be programmed 1 to 256 bytes at

a time, using the Page Program instruction.

The memory supports Sector Erase and Bulk Erase

instructions.

Each device requires only a 3.0 volt power supply

(2.7V to 3.6V) for both read and write functions.

Internally generated and regulated voltages are pro-

vided for program operations. This device does not

require Vpp supply.

GENERAL PRODUCT DESCRIPTION

BLOCK DIAGRAM

Logic

DATA PATH

Array - R

Array - L

SRAM

ES25P40 Datasheet(PDF) 2 Page - Excel Semiconductor Inc.