STGO30H60DLLFBAG datasheet(1/15 Pages) STMICROELECTRONICS

No. de pieza	STGO30H60DLLFBAG

Descripción Electrónicos	Automotive-grade trench gate field-stop, 600 V, 30 A, high-speed HB series IGBT in a TO‑LL package

PDF	15 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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TO-LL

TAB

1

8

1

type B

C(TAB)

E(2, 3, 4, 5, 6, 7, 8)

G1CTABE2345678

G(1)

Features

•

AEC-Q101 qualified

•

Maximum junction temperature: TJ = 175 °C

•

Logic level gate drive

•

High-speed switching series

•

Minimized tail current

•

VCE(sat) = 1.6 V (typ.) @ IC = 30 A

•

Low VF soft-recovery co-packaged diode

•

Tight parameter distribution

•

Safer paralleling

•

Low thermal resistance

Applications

•

Automotive injection

Description

This device is an IGBT developed using an advanced proprietary trench gate field-

stop structure. The device is part of the new HB series of IGBTs, which represents

an optimum compromise between conduction and switching loss to maximize the

efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)

temperature coefficient and very tight parameter distribution result in safer paralleling

operation.

Product status link

STGO30H60DLLFBAG

Product summary

Order code

STGO30H60DLLFBAG

Marking

GO30H60DLL

Package

TO-LL type B

Packing

Tape and reel

Automotive-grade trench gate field-stop, 600 V, 30 A, high-speed HB series

IGBT in a TO

‑LL package

STGO30H60DLLFBAG

Datasheet

DS12913 - Rev 4 - January 2022

For further information contact your local STMicroelectronics sales office.

www.st.com

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STGO30H60DLLFBAG Datasheet(PDF) 1 Page - STMicroelectronics

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