AP22652/AP22653/AP22652A/AP22653A

Document number: DS41186 Rev. 3 - 2

5 of 16

www.diodes.com

September 2021

© Diodes Incorporated

AP22652/AP22653/AP22652A/AP22653A

Electrical Characteristics (@ TA = +25°C, VIN = 3.0V to 5.5V, VEN = 0V or VEN = VIN, RFAULT = 10kΩ, unless otherwise specified.)

Symbol

Parameter

Test Conditions (Note 8)

Min

Typ

Max

Unit

Supply

VUVLO

Input UVLO

VIN Rising

—

2.65

2.95

V

∆

VUVLO

Input UVLO Hysteresis

VIN Decreasing

—

65

—

mV

ISHDN

Input Shutdown Current

VIN = 5.5V, Disabled, OUT = Open

—

0.1

1

µA

IQ

Input Quiescent Current

VIN = 5.5V, Enabled, OUT = Open, RLIM = 20kΩ

—

140

160

µA

VIN = 5.5V, Enabled, OUT = Open, RLIM = 210kΩ

—

120

140

µA

IREV

Reverse Leakage Current

Disabled, VIN = 0V, VOUT = 5.5V, IREV at VIN

—

0.01

1

µA

Power Switch

RDS(ON)

Switch On-Resistance

SOT26 (Type A1) Package

TJ = +25°C, VIN = 5.0V

—

65

90

mΩ

-40°C ≤ TA ≤ +85°C

—

—

135

W-DFN2020-6 (Type A1)

Package

TJ = +25°C, VIN = 5.0V

—

65

90

-40°C ≤ TA ≤ +85°C

—

—

135

tR

Output Turn-On Rise Time

VIN = 5.5V, CL = 1µF, RLOAD = 100Ω. See Figure 1

—

0.5

1.5

ms

VIN = 3.0V, CL = 1µF, RLOAD = 100Ω

—

0.3

1

ms

tF

Output Turn-Off Fall Time

VIN = 5.5V, CL = 1µF, RLOAD = 100Ω. See Figure 1

0.1

—

0.5

ms

VIN = 3.0V, CL = 1µF, RLOAD = 100Ω

0.1

—

0.5

ms

Current Limit

ILIMIT

Current-Limit Threshold

(Maximum DC Output Current),

VIN = 5V, VOUT = 4.5V

RLIM = 10kΩ

TA

= +25°C

2478

2665

2852

mA

-40°C ≤ TA ≤ +85°C

2398

2665

2931

RLIM = 15kΩ

TA

= +25°C

1614

1735

1856

-40°C ≤ TA ≤ +85°C

1561

1735

1908

RLIM = 20kΩ

TA

= +25°C

1196

1286

1376

-40°C ≤ TA ≤ +85°C

1157

1286

1414

RLIM = 49.9kΩ

TA

= +25°C

456

490

524

-40°C ≤ TA ≤ +85°C

441

490

539

RLIM = 210kΩ

TA

= +25°C

95

125

155

RLIM Shorted to GND

40

80

120

ISHORT

Short-Circuit Current Limit, OUT

Connected to GND

RLIM = 10kΩ, TA

= +25°C

—

700

—

mA

RLIM = 15kΩ, TA

= +25°C

—

470

—

RLIM = 20kΩ, TA

= +25°C

—

350

—

RLIM = 49.9kΩ, TA

= +25°C

—

140

—

RLIM = 210kΩ, TA

= +25°C

—

35

—

RLIM Shorted to GND, TA

= +25°C

—

80

—

Enable Pin

ILEAK-EN

EN Input Leakage Current

VIN = 5V, VEN = 0V and 5.5V

-2

—

2

µA

tON

Turn-On Time

CL = 1µF, RL = 100Ω. See Figure 1

—

—

4

ms

tOFF

Turn-Off Time

CL = 1µF, RL = 100Ω. See Figure 1

—

—

1

ms

Output Discharge

RDIS

Discharge Resistance (Note 9)

VIN = 5V, Disabled, IOUT = 1mA

—

600

—

Ω

Notes:

8. Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.

9. The discharge function is active when the device is disabled (when enable is de-asserted or during power-up power-down when VIN < VUVLO).

The discharge function offers a resistive discharge path for the external storage capacitor for limited time.