L99LD20 datasheet(44/61 Pages) STMICROELECTRONICS

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Electrical specifications

L99LD20

44/61

DS11366 Rev 3

5.4

Electrical characteristics

5.5 V < VS < 24 V, -40 °C < Tj < 150 °C, unless otherwise specified.

The device is still operative and functional at higher temperatures (up to 175 °C).

Note:

Parameters limits at higher temperatures than 150°C may change respect to what is

specified as per the standard temperature range.

Device functionality at high temperature is guaranteed by characterization.

5.4.1

Supply

Table 33. Supply

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

VSPI

Digital I/O supply voltage

3.0

5.5

VSPI,UV

VSPI under voltage

2.0

2.5

3.0

ISPI,STBY

VSPI standby current

Device in standby mode

VSPI = 5.0 V

µA

ISPI,Q

VSPI quiescent current

Device operating

VSPI = 5.0 V

3mA

Operating VS supply voltage

5.5

VS,UV, L

VS under voltage shutdown

low limit

VSPI = 5 V; Ramp on VS from

5.5 V to 4.4 V

4.5

VS,UV,H

VS under voltage shutdown

high limit

VSPI = 5 V; Ramp on VS from

4.4 V to 5.85 V

5.3

5.6

VS,UV,HYST

VS under voltage hysteresis

0.5

VS operating current

VS = 13.5 V;

Buck1 and Buck2 ON;

VBUCKIN1 = VBUCKIN2 = 25 V

IOUT1 = IOUT2 = 250 mA

IS,Q

VS quiescent current

VSPI = 5 V, VS = 13.5 V; Bucks

disabled

716

IS,STBY

VS standby current

Device in standby mode;

VS = 13.5 V

610

µA

VPOR,H

Power-on reset high state

Ramp on V3V3 from 3.3 V to 2 V

2.7

2.8

2.9

VPOR,L

Power-on reset low state

Ramp on V3V3 from 2 V to 3.3 V

2.65

2.75

2.85

VPOR,HYST

Power-on reset hysteresis

0.05

V3V3

Output voltage of 3V3 LDO

VS = 13 V, Cout = 220 nF

3.1

3.3

3.5

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