ST36015 datasheet(3/11 Pages) STMICROELECTRONICS

No. de pieza	ST36015

Descripción Electrónicos	20 W, 28 V, 0.7 to 3.6 GHz RF power LDMOS transistor

PDF	11 Pages

Scroll/Zoom	100%

Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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Electrical characteristics

TC = 25 °C unless otherwise specified.

Table 4. Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 100 µA

IDSS

Zero-gate voltage drain current

VGS = 0 V, VDS = 28 V

μA

VGS = 0 V, VDS = 50 V

IGSS

Gate-body leakage current

VGS = -6/10 V, VDS = 0 V

±100

VGS(th)

Gate threshold voltage

VDS = 28 V, ID = 600 μA

1.5

2.5

VDS(on)

Static drain-source on-voltage

VGS = 10 V, ID = 200 mA

0.25

IDS(on)

Static drain-source on-current

VGS = 10 V, VDS = 100 mV

2.5

RDS(on)

Drain-source on-state resistance

VGS = 10 V, ID = 0.18 A

VGS = 10 V, ID = 0.75 A

CISS

Common source input

capacitance

VGS = 0 V, VDD = 28 V,

f = 1 MHz

CRSS

Common source feedback

capacitance

0.3

COSS

Common source output

capacitance

8.4

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

POUT

Output power

VDD = 28 V, IDQ = 10 mA, f = 3450 MHz,

pulse width = 10 μs, DC = 10%

GPS

Power gain

12.4

ηD

Drain efficiency

VSWR

Load mismatch

POUT = 20 W, all phases

10:1

ST36015

Electrical characteristics

DS12760 - Rev 4

page 3/11

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