A2

1

2

3

Pin connection

Pin

Connection

1

Gate

2

Drain

3

Source (bottom side)

Features

Order code

Frequency

VDD

POUT

Gain

Efficiency

RF2L36040CF2

3600 MHz

28 V

40 W

14 dB

48%

•

High efficiency and linear gain operations

•

Integrated ESD protection

•

Internally matched for ease of use

•

Large positive and negative gate-source voltage range for improved class C

operation

•

Excellent thermal stability, low HCI drift

•

In compliance with the european directive 2002/95/EC

Applications

•

Telecom

•

S-band radar

Description

The RF2L36040CF2 is a 40 W, 28 V internally matched LDMOS FET, designed for

cellular and S-band radar applications at frequencies from 2.7 to 3.6 GHz. It can be

used in class AB, B or C for all typical modulation formats.

Product status link

RF2L36040CF2

Product summary

Order code

RF2L36040CF2

Marking

2L36040

Package

A2

Packing

Tape and reel 13"

Base/bulk quantity

160/160

40 W, 28 V, 2.7 to 3.6 GHz RF power LDMOS transistor

RF2L36040CF2

Datasheet

DS13235 - Rev 2 - April 2021

For further information contact your local STMicroelectronics sales office.

www.st.com