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STPSC8065 Datasheet(PDF) 1 Page - STMicroelectronics

No. de pieza STPSC8065
Descripción Electrónicos  650 V power Schottky silicon carbide diode
PDF  9 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPSC8065 Datasheet(HTML) 1 Page - STMicroelectronics

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Ju
ly 2017
DocID030730 Rev 2
1/9
This is information on a product in full production.
www.st.com
STPSC8065
650 V power Schottky silicon carbide diode
Datasheet - production data
Features
No or negligible reverse recovery
Switching behavior independent of
temperature
Dedicated to PFC applications
High forward surge capability
Operating Tj from -40 °C to 175 °C
ECOPACK®2 compliant component
Description
The SiC diode is an ultra high performance
power Schottky diode. It is manufactured using a
silicon carbide substrate. The wide band gap
material allows the design of a Schottky diode
structure with a 650 V rating. Due to the Schottky
construction, no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
Especially suited for use in PFC applications, this
ST SiC diode will boost performance in hard
switching conditions. Its high forward surge
capability ensures good robustness during
transient phases.
Table 1: Device summary
Symbol
Value
IF(AV)
8 A
VRRM
650 V
Tj (max.)
175 °C
VF (typ.)
1.30 V


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