SBP13007-H1 datasheet(1/6 Pages) SEMIWELL

No. de pieza	SBP13007-H1

Descripción Electrónicos	High Voltage Fast-Switching NPN Power Transistor

PDF	6 Pages

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Fabricante Electrónico	SEMIWELL [SemiWell Semiconductor]

Página de inicio	http://www.semiwellsemi.co.kr

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Absolute Maximum Ratings

Symbol

Parameter

Value

Units

VCES

Collector-Emitter Voltage ( VBE = 0 )

700

V

VCEO

Collector-Emitter Voltage ( IB = 0 )

400

V

VEBO

Emitter-Base Voltage ( IC = 0 )

9.0

V

IC

Collector Current

8.0

A

ICM

Collector Peak Current ( tP ＜ 5 ms )

16

A

IB

Base Current

4.0

A

IBM

Base Peak Current ( tP ＜ 5 ms )

8.0

A

PC

Total Dissipation at TC = 25 °C

80

W

TSTG

Storage Temperature

- 65 ~ 150

°C

TJ

Max. Operating Junction Temperature

150

°C

Thermal Characteristics

Symbol

Parameter

Value

Units

RθJC

Thermal Resistance, Junction-to-Case

1.56

°C/W

RθJA

Thermal Resistance, Junction-to-Ambient

62.5

°C/W

SBP13007- H1

Aug, 2003. Rev. 3

1/6

Features

- Very High Switching Speed (Typical 60ns@5.0A)

- Minimum Lot-to-Lot hFE Variation

- Short storge time

- Wide Reverse Bias S.O.A

General Description

This device is designed for high voltage, high speed switching char-

acteristic,especially suitable for ballast system.

High Voltage Fast-Switching NPN Power Transistor

2.Collector

3.Emitter

1.Base

Symbol

○

TO-220

SemiWell Semiconductor

1

2

3

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SBP13007-H1 Datasheet(PDF) 1 Page - SemiWell Semiconductor

SBP13007-H1 Datasheet(HTML) 1 Page - SemiWell Semiconductor

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