QPD1016LEVB01 datasheet(1/24 Pages) QORVO

No. de pieza	QPD1016LEVB01

Descripción Electrónicos	DC – 1.7 GHz, 50 V, 500 W GaN RF Transistor

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Fabricante Electrónico	QORVO [Qorvo, Inc]

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QPD1016L

DC

– 1.7 GHz, 50 V, 500 W GaN RF Transistor

Datasheet Rev. A, September 2020 | Subject to change without notice

- 1 of 23 -

www.qorvo.com

NI-780 Package

Product Overview

The Qorvo QPD1016L is a 500 W (P3dB) pre-matched

discrete GaN on SiC HEMT which operates from DC to 1.7

GHz and 50 V supply. The device is in an industry standard

air cavity package and is ideally suited for IFF, avionics,

military and civilian radar, and test instrumentation.

The

device can support pulsed and linear operations.

ROHS compliant.

Evaluation boards are available upon request.

Functional Block Diagram

Key Features

• Frequency: DC to 1.7 GHz

• Output Power (P3dB): 537 W

• Linear Gain: 18 dB

• Typical Drain Efficiency at 3 dB compresion: 67%

• Operating Voltage: 50 V

• CW and Pulse capable

Applications

• IFF

• Avionics

• Military and civilian radar

• Test instrumentation

Ordering info

Part No.

Description

QPD1016L

DC – 1.7 GHz, 50 V, 500 W GaN

RF Transistor

QPD1016LS1

Sample bag

– 1 piece

QPD1016LS2

Sample bag

– 2 piece

QPD1016LEVB01

1.2

– 1.4 GHz EVB

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QPD1016LEVB01 Datasheet(PDF) 1 Page - Qorvo, Inc

QPD1016LEVB01 Datasheet(HTML) 1 Page - Qorvo, Inc

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