QPD1028LEVB datasheet(1/16 Pages) QORVO

No. de pieza	QPD1028LEVB

Descripción Electrónicos	750 W, 65 V, 1.2 ??1.4 GHz, GaN RF Input-Matched Transistor

PDF	16 Pages

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Fabricante Electrónico	QORVO [Qorvo, Inc]

Página de inicio	https://www.qorvo.com/

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QPD1028L

750 W, 65 V, 1.2 – 1.4 GHz, GaN RF Input-Matched Transistor

Data Sheet Rev. C, Oct 2021 | Subject to change without notice

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®

Ni-780 Package

Key Features

• Frequency Range: 1.2 to 1.4 GHz

• Linear Gain1: 19.8 dB

• Output Power (P3dB)1: 838.5 W

• Drain Efficiency (P3dB)1: 67.3%

• Operating Voltage: 65 V

• CW and Pulse capable

Note 1: EVB Performance @ 1.3 GHz

Product Overview

The Qorvo QPD1028L is a 750 W (P3dB) discrete GaN on

SiC HEMT which operates from 1.2 to 1.4 GHz. Input pre-

match within the package results in ease of external board

match and saves board space. The device is in an industry

standard air cavity package and is ideally suited for radar.

The device can support both CW and pulsed operations.

Evaluation boards are available upon request.

Functional Block Diagram

Ordering Information

Applications

• L-Band Radar

Part No.

Description

QPD1028L

1.2

– 1.4 GHz Transistor (18 pcs in tray)

QPD1028LEVB

1.2

– 1.4 GHz Evaluation Board

Número de pieza similar - QPD1028LEVB

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Qorvo, Inc	QPD1028	1Mb / 16P	750 W, 65 V, 1.2 – 1.4 GHz, GaN RF Input-Matched Transistor November 2021
Qorvo, Inc	QPD1028EVB	1Mb / 16P	750 W, 65 V, 1.2 – 1.4 GHz, GaN RF Input-Matched Transistor November 2021

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Descripción similar - QPD1028LEVB

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TriQuint Semiconductor	QPD1025L	1Mb / 18P	1500 W, 65 V, 1.0 ??1.1 GHz, GaN RF Input-Matched Transistor
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	QPD1026L	1Mb / 19P	1300 W, 65 V, 420 ??450 MHz, GaN RF Input-Matched Transistor December 2018
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QPD1028LEVB Datasheet(PDF) 1 Page - Qorvo, Inc

QPD1028LEVB Datasheet(HTML) 1 Page - Qorvo, Inc

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